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MGF7168C Dataheets PDF



Part Number MGF7168C
Manufacturers Mitsubishi
Logo Mitsubishi
Description UHF BAND GaAs POWER AMPLIFIER
Datasheet MGF7168C DatasheetMGF7168C Datasheet (PDF)

MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7168C UHF BAND GaAs POWER AMPLIFIER DESCRIPTION MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the .

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MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7168C UHF BAND GaAs POWER AMPLIFIER DESCRIPTION MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the resistor Note1: Connect to matching circuits. FEATURES - Low voltage operation Vd=3.2V - High output power Po=33dBm (typ.) @1710~1785MHz Po=33dBm (typ.) @1850~1910MHz - High efficiency Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - External matching circuit is required GND GND APPLICATION - 1.8GHz band handheld phone - 1.9GHz band handheld phone QUALITY GRADE - GG *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Symbol Vd1,Vd2 Vg1,Vg2 Pi Tc(op) Tstg Parameter Drain voltage Gate voltage Input power Operating case temperature Storage temparature Ratings 6 -4 15 -30~+85 -30~+100 Unit V V dBm ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f Pin Idt Ig 2sp ρin Parameter frequency Input power Total drain current Gate current 2nd harmonics input VSWR Damage with-standing Note3 Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=10, All phase Time=10 sec Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=3:1, All phase Vd1=Vd2=3.2V, Pin<10dBm, Po=33dBm Test conditions Note1,2 MIN 1710 1850 Vd1=Vd2=3.2V,Po=33dBm — — — — — Limits TYP MAX — — — 1250 — — — 1785 MHz 1910 10 — 3 -30 3 dBm mA mA dBc — Unit — No damage — Stability Note3 No oscillation Spurious level<-60dBc Note1 : Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note2 : GMSK Pulse operation Note3 : Sampling inspection MITSUBISHI ELECTRIC (2/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pin FET1 Matching circuits FET2 Pout VD1 VD2 Equivalent circuit of MGF7168C with our test board : MGF7168C(Ceramic package) : our test board(εr=4.8, t=0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance ZI=4.5-j27.8 (Ω) : 1.88GHz ZL(ηmax) = 3.3-j4.7 (Ω) : f=1.88GHz ZL(Po max)= 2.4-j5.8 (Ω) : f=1.88GHz ηmax 1150mA(Po>32.8dBm) Pomax (33.8dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC (4/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCS(DCS1900) l=14.0 w=1.0 Pin l=6.7 w=1.0 1.5pF l=2.0 w=1.0 MGF 7168C 2.5pF Vd2 l=28.6 w=0.5 l=2.7 w=2.2 1000pF Pout 8pF 3pF l=11.7 w=3.5 Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (5/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout, Idt, ηt for PCS1900 1500 70 35 30 1300 60 25 1100 50 Pout (dBm) 20 Idt (mA) 900 40 15 700 30 10 500 20 5 Pout Idt 300 Pout Efficiency 10 0 -5 100 0 5 Pin (dBm) 10 15 -5 0 5 Pin (dBm) Fin=1880MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation 10 15 0 MITSUBISHI ELECTRIC (6/12) Mar.'97 Efficiency (%) MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (DCS1800) ZI= 6.0-j22.4 (Ω) : 1.75GHz ZL(ηmax) = 3.3-j2.6 (Ω) : 1.75GHz ZL(Po max)= 2.2-j3.5 (Ω) : 1.75GHz 0.1 ηmax 1250mA(Po>33dBm) Pomax (33.7dBm) 0.2 Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC (7/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCN(DCS1800) l=14.0 w=1.0 Pin l=6.7 w=1.0 2pF l=2.0 w=1.0 MGF 7168C 3.5pF Vd2 l=28.6 w=0.5 l=2.7 w=2.2 1000pF Pout 15pF 3.5pF l=11.7 w=3.5 Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (8/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCN (DCS1800) l=2.0 w=1.0 Pin 3.5 pF 2 pF l=2.0 w=1.0 MGF 7168C Vd2 1000pF l=26 w=0.5 Pout l=2.7 w=2.2 3.0 pF 10 pF l=2.7 w=3.5 0.5 pF l=9.0 w=3.5 Unit:mm SUB. data ER=4.8 H=600µ m Metal T=43µ m MITSUBISHI ELECTRIC (9/12) Aug.'97 MITSUBISH.


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