3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
MITSUBISHI SEMICONDUCTOR
PRELIMINARY
Notice : This is not a final specification Some parametric limits are ...
Description
MITSUBISHI SEMICONDUCTOR
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MGF7175C
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
DESCRIPTION
The MGF7175C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.
PIN CONFIGURATION (TOP VIEW)
FEATURES
Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required
GND OUT GND
VSS VD_LEV VT GND IN
APPLICATION
1.9GHz band handheld phone (7mmx6.1mmx1mm) pin pitch 1.0mm
QUALITY GRADE
GG
Block Diagram of this IC and Application Circuit Example.
Regulator Battery VDD2 VDD1
Negative voltage generator
VT
Pout
VD3 Matching circuit GND VGC
Matching circuit
Pin
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against...
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