4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI SEMICONDUCTOR
MGFC36V4450A
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC3...
Description
MITSUBISHI SEMICONDUCTOR
MGFC36V4450A
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
Unit : millimeters
21.0 +/-0.3
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP.) @ f=4.4~5.0GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
2MIN
(1)
0.6 +/-0.15
12.9 +/-0.2
(2)
(2)
R-1.6 11.3
2MIN
(3)
10.7 17.0 +/-0.2
4.5 +/-0.4
item 01 : 4.4~5.0 GHz band power amplifier item 51 : 4.4~5.0 GHz band digital radio communication
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V) ID = 1.2(A) RG= 100 (ohm) Refer to Bias Procedure
(Ta=25 deg.C) Ratings -15 -15 3.75 -10 21 25 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
0.2
QUALITY GRADE
1.6
12.0
GF-8
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT Total power dissipation *1 Tch Channel temperature Tstg Storage temperature *1 : Tc=25 deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semicondu...
Similar Datasheet
