MGFC39V7177A

< C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=7.1 – 7.7GHz  High power gain GLP= 8.0dB (TYP.) @f=7.1 – 7.7GHz  High power added efficiency P.A.E.=28% (TYP.) @f=7.1 – 7.7GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L APPLICATION  item 01 : 7.1 – 7.7 GHz band power amplifier  item 51 : 7.1 – 7.7 GHz band digital radio communication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 QUALITY  IG 12.0 0.2 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=2.4A Refer to Bias Procedu...