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< C band internally matched power GaAs FET >
MGFC40V7177
7.1 – 7.7 GHz BAND / 10W
DESCRIPTION
The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system • High output power
P1dB=10W (TYP.) @f=7.1 – 7.7GHz • High power gain
GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz • High power added efficiency
P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz • Low distortion [item -51]
IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L
APPLICATION
• item 01 : 7.1 – 7.7GHz band microwave high power amplifier • item 51 : 7.1 – 7.7GHz band digital radio communication
QUALITY
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=10V • ID=2.4A • RG=50ohm Refer to Bias Procedure
4.2±0.3
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
VGDO Gate to drain breakdown voltage
VGSO Gate to source breakdown voltage
ID Drain current
IG.