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MGFC40V7177 Dataheets PDF



Part Number MGFC40V7177
Manufacturers Mitsubishi
Logo Mitsubishi
Description C band internally matched power GaAs FET
Datasheet MGFC40V7177 DatasheetMGFC40V7177 Datasheet (PDF)

< C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=7.1 – 7.7GHz • High power gain GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz • High power added efficiency P.A.E.=30% (TYP.) @f=7..

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< C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=7.1 – 7.7GHz • High power gain GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz • High power added efficiency P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz • Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION • item 01 : 7.1 – 7.7GHz band microwave high power amplifier • item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.4A • RG=50ohm Refer to Bias Procedure 4.2±0.3 Absolute maximum ratings (Ta=25°C) Symbol Parameter VGDO Gate to drain breakdown voltage VGSO Gate to source breakdown voltage ID Drain current IG.


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