5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI SEMICONDUCTOR
MGFC45V5053A
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC4...
Description
MITSUBISHI SEMICONDUCTOR
MGFC45V5053A
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES (TARGET)
Internally matched to 50 (Ω) system High output power
P1dB=32W (TYP.) @f=5.05~5.25GHz High power gain
GLP=10.0dB (TYP.) @f=5.05~5.25GHz High power added efficiency
P.A.E.=33% (TYP.) @f=5.05~5.25GHz Low distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
APPLICATION
5.05~5.25GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=8A RG=25Ω Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature *1 : Tc=25°C
Rat...
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