C band internally matched power GaAs FET
< C band internally matched power GaAs FET >
MGFC45V5964A
5.9 – 6.4 GHz BAND / 32W
DESCRIPTION
The MGFC45V5964A is an i...
Description
< C band internally matched power GaAs FET >
MGFC45V5964A
5.9 – 6.4 GHz BAND / 32W
DESCRIPTION
The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system High output power
P1dB=32W (TYP.) @f=5.9 – 6.4GHz High power gain
GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency
P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
5.9 – 6.4 GHz band power amplifier
QUALITY
IG
2MIN
17.4 +/- 0.2 8.0 +/- 0.2
2MIN
OUTLINE
R1.2
24 +/- 0.3
unit : mm
0.6 +/- 0.15 (1 )
(2 )
(3 ) 20.4 +/- 0.2 16.7
0.1 +/- 0.05 2.4 +/- 0.2
4.3 +/- 0.4 1.4
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=8.0A RG=25ohm Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to ...
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