MGFC5213 Datasheet PDF

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICON...

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5213 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 27.5 to 30.0 GHz Linear gain : ≥ 9 dB P1dB : ≥ 29 dBm DC power : Vd = 5 V, Id1 + Id2 = 1080 mA Vg1 Vg2 Vd1 Vd2 In Vd1 Out ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 480 960 25 -20 ~ +70 -65 ~ +175 +300 Units V V mA mA dBm ˚C ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) Symbol Gain VSWR in VSWR out P1dB Gain Input VSWR Output VSWR Output power at 1 dB compression point Parameter Conditions Min. Vd = 5 V Id1 = 360 mA Id2 = 720 mA (RF off) f = 27.5, 30.0 GHz Single tone 9.0 3.0 3.0 29.0 Limits Units Typ. Max. dB dBm MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5213 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) Vg 1 Vg 2 Vd 1 Vd 2 GN D RFin GN D Vd 1 GN D RFout GN D Vg 1 Vg 2 Vd 1 Vd 2 27 5 13 0 86 5 106 0 156 0 194 0 X Dimention 1....