K-Band 2-Stage Power Amplifier
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICON...
Description
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5217
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5217 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band Middle Power Amplifier (MPA) .
BLOCK DIAGRAM
Vg1 Vg2
FEATURES
RF frequency : 18.0 to 19.0 GHz
In Vd1
Out
Vd2
P2dB
: ≥ 25.5 dBm(TYP.) @ 18.0 to 19.0 GHz
PHOTOGRAPH
TARGET SPECIFICATIONS (Ta=25˚C)
Limits Symbol IDSS1 IDSS2 Vp1 Vp2 P3dB Gain Input Return Loss Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 3 dB Compression Point Gain Input Return Loss Output Return Loss f=18.0-19.0 GHz, IM3 Inter Modulation Level Vd1=Vd2=5V , Id1=40mA*, Id2=180mA* * : Ids at RF off TBD dBc Vd=3.0V,Id=0.032mA Vd=3.0V,Id=0.12mA f=18.0-19.0 GHz, Vd1=Vd2=5V , Id1=40mA*, Id2=180mA* 17.0 6.0 6.0 dB dB dB Test Conditions Vd=3.0V Min. 80 300 -2.0 -2.0 Typ. 25.5 Max. 140 540 -1.0 -1.0 Unit mA mA V V dBm
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5217
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1820
UNIT:µm
580 130
Vg2 (-0.2 to -1.0 V) Vg1(-0.2 to -1.0 V) GND
GND RF-in GND
X Dimension : 1940(+60/-100)µm Y Dimension : 1000(+60/-100)µm
GND RF-out GND
Vd1
Vd2
GND
570 1570 1820...
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