K-Band 2-Stage Power Amplifier
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICON...
Description
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5218
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) .
BLOCK DIAGRAM
Vg1 Vg2 Vd1 Vd2
FEATURES
RF frequency : 18.0 to 19.0 GHz P1dB : ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz
In
Vd1
Out
Vg1 Vg2 Vd1 Vd2 Chip size: 1940 µm x 2000 µm
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Gain Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 1 dB Compression Point Gain Output Return Loss f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* Pout=TBD *:Ids at RF off Vd=3.0V,Id=0.6mA Vd=3.0V,Id=1.2mA f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* -2.0 -2.0 29.0 15.0 8.0 8.0 Test Conditions Vd=3.0V Min. Limits Typ. 720 1440 -1.0 -1.0 Max. Unit mA mA V V dBm dB dB dB
Input Return Loss Input Return Loss
IM3
Inter Modulation Level
TBD
dBc
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5218
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
Vg2 (-0.2 to -1.0 V) Vd1 Vg1 (-0.2 to -1.0 V)
Vd2
GND RF-in GND Vd1
GND RF-out GND
Vg1
Vg2
Vd1
Vd2
130 275 990 975 1535 1940
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