DUAL BUFFER GATE
INTEGRATED CIRCUITS
DATA SHEET
74LVC2G34 Dual buffer gate
Product specification Supersedes data of 2003 Jul 25 2004 Sep...
Description
INTEGRATED CIRCUITS
DATA SHEET
74LVC2G34 Dual buffer gate
Product specification Supersedes data of 2003 Jul 25 2004 Sep 10
Philips Semiconductors
Product specification
Dual buffer gate
FEATURES Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant input/output for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V). ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V. ±24 mA output drive (VCC = 3.0 V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Multiple package options Specified from −40 °C to +85 °C and −40 °C to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C. SYMBOL tPHL/tPLH PARAMETER propagation delay input nA to output nY CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ VCC = 2.5 V; CL = 30 pF; RL = 500 Ω VCC = 2.7 V; CL = 50 pF; RL = 500 Ω VCC = 3.3 V; CL = 50 pF; RL = 500 Ω VCC = 5.0 V; CL = 50 pF; RL = 500 Ω CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance VCC = 3.3 V; no...
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