NAND gate. 74LVT00 Datasheet

74LVT00 gate. Datasheet pdf. Equivalent

74LVT00 Datasheet
Recommendation 74LVT00 Datasheet
Part 74LVT00
Description 3.3V Quad 2-input NAND gate
Feature 74LVT00; INTEGRATED CIRCUITS 74LVT00 3.3V Quad 2-input NAND gate Product specification IC24 Data Handbook 19.
Manufacture NXP
Datasheet
Download 74LVT00 Datasheet





NXP 74LVT00
INTEGRATED CIRCUITS
74LVT00
3.3V Quad 2-input NAND gate
Product specification
IC24 Data Handbook
1996 Aug 15
Philips
Semiconductors



NXP 74LVT00
Philips Semiconductors
3.3V Quad 2-input NAND gate
Product specification
74LVT00
QUICK REFERENCE DATA
SYMBOL
PARAMETER
tPLH
tPHL
CIN
ICCL
Propagation delay
An or Bn
to Yn
Input capacitance
Total supply current
CONDITIONS
Tamb = 25°C;
GND = 0V
CL = 50pF;
VCC = 3.3V
VI = 0V or 3.0V
Outputs Low; VCC = 3.6V
TYPICAL
2.7
2.7
3
1
UNIT
ns
pF
mA
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP
14-Pin Plastic TSSOP
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVT00 D
74LVT00 DB
74LVT00 PW
NORTH AMERICA
74LVT00 D
74LVT00 DB
74LVT00PW DH
DWG NUMBER
SOT108-1
SOT337-1
SOT402-1
LOGIC SYMBOL
1 2 4 5 9 10 12 13
A0 B0 A1 B1 A2 B2 A3 B3
Y0 Y1 Y2 Y3
VCC = Pin 14
GND = Pin 7
3 6 8 11
SA00334
LOGIC SYMBOL (IEEE/IEC)
1&
2
3
4
6
5
9
8
10
PIN CONFIGURATION
A0 1
B0 2
Y0 3
A1 4
B1 5
Y1 6
GND 7
14 VCC
13 B3
12 A3
11 Y3
10 B2
9 A2
8 Y2
SA00333
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 2, 4, 5, 9,
10, 12, 13
An-Bn
Data inputs
3, 6, 8, 11
Yn Data outputs
7 GND Ground (0V)
14 VCC Positive supply voltage
12
11
13
SF00004
1996 Aug 15
2 853-1858 17183



NXP 74LVT00
Philips Semiconductors
3.3V Quad 2-input NAND gate
Product specification
74LVT00
LOGIC DIAGRAM
A0 1
B0 2
A1 4
B1 5
VCC = Pin 14
GND = Pin 7
A2 9
B2 10
12
A3
B3 13
3
Y0
6
Y1
8
Y2
11
Y3
SA00360
FUNCTION TABLE
INPUTS
Dna Dnb
LL
LH
HL
HH
NOTES:
H = High voltage level
L = Low voltage level
OUTPUT
Qn
H
H
H
L
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
VI < 0
VO < 0
Output in Off or High state
Output in High state
Output in Low state
–0.5 to +4.6
–50
–0.5 to +7.0
–50
–0.5 to +7.0
–32
64
V
mA
V
mA
V
mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
t/v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
LIMITS
MIN MAX
2.7 3.6
0 5.5
2.0
0.8
–20
32
10
–40 +85
UNIT
V
V
V
V
mA
mA
ns/V
°C
1996 Aug 15
3





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