NAND gate. 74LVT10 Datasheet

74LVT10 gate. Datasheet pdf. Equivalent

74LVT10 Datasheet
Recommendation 74LVT10 Datasheet
Part 74LVT10
Description 3.3V Triple 3-input NAND gate
Feature 74LVT10; INTEGRATED CIRCUITS 74LVT10 3.3V Triple 3-input NAND gate Product specification IC24 Data Handbook .
Manufacture NXP
Datasheet
Download 74LVT10 Datasheet





NXP 74LVT10
INTEGRATED CIRCUITS
74LVT10
3.3V Triple 3-input NAND gate
Product specification
IC24 Data Handbook
1996 May 29
Philips
Semiconductors



NXP 74LVT10
Philips Semiconductors
3.3V Triple 3-input NAND gate
Product specification
74LVT10
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
Tamb = 25°C;
GND = 0V
Propagation
tPLH delay
tPHL An, Bn, Cn
to Yn
CL = 50pF;
VCC = 3.3V
CIN
Input
capacitance
VI = 0V or 3.0V
ICCL
Total supply
current
Outputs Low;
VCC = 3.6V
TYPICAL UNIT
3.8
3.3
ns
2 pF
1 mA
PIN CONFIGURATION
LOGIC SYMBOL (IEEE/IEC)
1&
2
13
3
4
5
9
10
11
12
6
8
A0 1
B0 2
A1 3
B1 4
C1 5
Y1 6
GND 7
14 VCC
13 C0
12 Y0
11 C2
10 B2
9 A2
8 Y2
SA00346
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 2, 3, 4, 5,
9, 10, 11, 13
An, Bn,
Cn
Data inputs
LOGIC DIAGRAM
VCC = Pin 14
GND = Pin 7
1
A0
2
B0
13
C0
3
A1
4
B1
5
C1
9
A2
10
B2
11
C2
SV00059
12
Y0
6
Y1
8
Y2
SA00348
6, 8, 12
7
14
Yn
GND
VCC
Data outputs
Ground (0V)
Positive supply voltage
LOGIC SYMBOL
1 2 13 3 4 5 9 10 11
A0 B0 C0 A1 B1 C1 A2 B2 C2
VCC = Pin 14
GND = Pin 7
Y0 Y1 Y2
12 6 8
SA00347
FUNCTION TABLE
INPUTS
Dna Dnb
LL
LL
LH
LH
HL
HL
HH
HH
NOTES:
H = High voltage level
L = Low voltage level
Dnc
L
H
L
H
L
H
L
H
OUTPUTS
Qn
H
H
H
H
H
H
H
L
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP
14-Pin Plastic TSSOP
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVT10 D
74LVT10 DB
74LVT10 PW
NORTH AMERICA
74LVT10 D
74LVT10 DB
74LVT10PW DH
DWG NUMBER
SOT108-1
SOT337-1
SOT402-1
1996 May 10
2 853–1832 16801



NXP 74LVT10
Philips Semiconductors
3.3V Triple 3-input NAND gate
Product specification
74LVT10
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
VI < 0
VO < 0
Output in Off or High state
Output in High state
Output in Low state
–0.5 to +4.6
–50
–0.5 to +7.0
–50
–0.5 to +7.0
–32
64
V
mA
V
mA
V
mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
t/v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
LIMITS
MIN MAX
2.7 3.6
0 5.5
2.0
0.8
–20
32
10
–40 +85
UNIT
V
V
V
V
mA
mA
ns/V
°C
1996 May 10
3





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