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74V1T125 Dataheets PDF



Part Number 74V1T125
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description SINGLE BUS BUFFER 3-STATE
Datasheet 74V1T125 Datasheet74V1T125 Datasheet (PDF)

® 74V1T125 SINGLE BUS BUFFER (3-STATE) s s s s s s s s HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS & OUTPUT SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY S (SOT23-5L) ORDER CODE: 74V1T125S C (SC-70) DESCRIPTION T.

  74V1T125   74V1T125



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® 74V1T125 SINGLE BUS BUFFER (3-STATE) s s s s s s s s HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS & OUTPUT SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY S (SOT23-5L) ORDER CODE: 74V1T125S C (SC-70) DESCRIPTION The 74V1T125 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. 3-STATE control input G has to be set high to place the output into the high impedance state. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. PIN CONNECTION AND IEC LOGIC SYMBOLS October 1999 1/8 74V1T125 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2 4 3 5 SYMBOL 1G 1A 1Y GND VCC NAME AND FUNCT ION Output Enable Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A X L H X:”H” or ”L” Z:High Impedance G H L L Y Z L H ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (see note 1) DC Output Voltage (see note 2) DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 260 Unit V V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) Output in OFF state 2) High or Low State RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO Top dt/dv Supply Voltage Input Voltage Output Voltage (see note 1) Output Voltage (see note 2) Operating Temperature Input Rise and Fall Time (see note 3) (V CC = 5.0 ± 0.5V) Parameter Valu e 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 20 Unit V V V V o C ns/V 1) Output in OFF state 2) High or Low State 3)VIN from0.8V to 2 V 2/8 74V1T125 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOH VOL IOZ High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current Output Leakage Current 4.5 to 5.5 4.5 to 5.5 4.5 4.5 4.5 4.5 5.5 0 to 5.5 5.5 5.5 I O =-50 µ A IO=-8 mA I O=50 µ A IO=8 mA VI = VIH or VIL VO = VCC or GND VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND VOUT = 5.5V 0 4.4 3.94 0.0 0.1 0.36 ±0.25 4.5 o Value T A = 25 C Min. 2 0.8 4.4 3.8 0.1 0.44 ±2.5 Typ . Max. -40 to 85 C Min . 2 0.8 Max. o Un it V V V V µA II ICC ∆ICC ±0.1.


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