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74V2G08 Dataheets PDF



Part Number 74V2G08
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description DUAL 2-INPUT AND GATE
Datasheet 74V2G08 Datasheet74V2G08 Datasheet (PDF)

74V2G08 DUAL 2-INPUT AND GATE s s s s s s s s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA = 25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY SOT23-8L ORDER CODES PACKAGE SOT23-8L T&R 74V2G08STR DESCRIPTION The 74V2G08 is an ad.

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74V2G08 DUAL 2-INPUT AND GATE s s s s s s s s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA = 25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY SOT23-8L ORDER CODES PACKAGE SOT23-8L T&R 74V2G08STR DESCRIPTION The 74V2G08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. PIN CONNECTION AND IEC LOGIC SYMBOLS June 2003 1/7 74V2G08 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 5 2, 6 7, 3 4 8 SYMBOL 1A, 2A 1B, 2B 1Y, 2Y GND VCC NAME QND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y L L L H ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 260 Unit V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V) (VCC = 5.0 ± 0.5V) Parameter Value 2 to 5.5 0 to 5.5 0 to VCC -55 to 125 0 to 100 0 to 20 Unit V V V °C ns/V ns/V 1) VIN from 30% to 70% of VCC 2/7 74V2G08 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC Input Leakage Current Quiescent Supply Current 0 to 5.5 5.5 IO=-50 µA IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND TA = 25°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ± 0.1 1 2.0 3.0 4.5 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 ±1 10 Typ. Max. Value -40 to 85°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.4 3.7 0.1 0.1 0.1 0.55 0.55 ±1 20 µA µA V V Max. -55 to 125°C Min. 1.5 0.7VCC 0.5 0.3VCC V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL VOH AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 3.3 3.3 (*) (*) Value TA = 25°C Min. Typ. 5.2 5.8 3.8 4.6 Max. 7.5 8.5 5.9 7.0 -40 to 85°C Min. 1.0 1.0 1.0 1.0 Max. 9.0 10.0 7.0 8.0 -55 to 125°C Min. 1.0 1.0 1.0 1.0 Max. 10.0 11.0 8.0 9.0 ns Unit CL (pF) 15 50 15 50 tPLH tPHL Propagation Delay Time 5.0(**) 5.0(**) (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 4 10 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 3/7 74V2G08 TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle) 4/7 74V2G08 SOT23-8L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 0 .65 1.95 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 8.6 3.5 110.2 102.3 59.0 25.6 76.7 21.6 TYP. MAX. 57.1 5.9 51.2 14.9 7.8 118.1 118.1 68.8 mils 5/7 74V2G08 Tape & Reel SOT23-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.13 3.07 1.27 3.9 3.9 3.23 3.17 1.37 4.0 4.0 12.8 20.2 60 14.4 3.33 3.27 1.47 4.1 4.1 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 TYP MAX. 180 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch 6/7 74V2G08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any .


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