Ordering number : ENN7129
MCH3109 / MCH3209
PNP / NPN Silicon Epitaxial Planar Transistors
MCH3109 / MCH3209
DC / DC C...
Ordering number : ENN7129
MCH3109 / MCH3209
PNP /
NPN Silicon Epitaxial Planar
Transistors
MCH3109 / MCH3209
DC / DC Converter Applications
Preliminary Applications
Package Dimensions
unit : mm 2194A
[MCH3109 / MCH3209]
0.25
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Base 2 : Emitter 3 : Collector
Specifications ( ) : MCH3109
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
0.85
1
2
(Top view)
SANYO : MCPH3
Unit (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.8 150 --55 to +150 V V V A A mA W °C °C
Ratings
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max (--)0.1 (--)0.1 200 (380)450 (25)2...
