MCH3302

Ordering number:ENN6369 P-Channel Silicon MOSFET MCH3302 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. Package Dimensions unit:mm 2167 [MCH3302] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.15 Ratings –30 ±20 –1 –4 1 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–300mA, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –1.0 670 950 350 680 90 50 20 460 950 Conditions Ratings min –30 –10 ±10 –2.5 typ max Unit V µA µA V mS mΩ mΩ pF pF pF Marking : JB Continued on next page. Any and all SANYO products described or contained herein do not have specificat...