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MCH3410 Dataheets PDF



Part Number MCH3410
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH3410 DatasheetMCH3410 Datasheet (PDF)

Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167 [MCH3410] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD .

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Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167 [MCH3410] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings 30 ± 20 2.0 8.0 0.9 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ± 10 1.2 1.4 2.0 115 190 120 30 15 150 270 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : KK 0.85 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13001 TS IM TA-3061 No.6864-1/4 MCH3410 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=2.0A VDS=10V, VGS=10V, ID=2.0A VDS=10V, VGS=10V, ID=2.0A IS=2.0A, VGS=0 Ratings min typ 6 4 17 5 3.6 0.6 0.5 0.88 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10µs D.C.≤1% ID=1A RL=15Ω D VOUT G P.G 50Ω MCH3410 S 3.0 ID -- VDS 6V 5V 3.0 ID -- VGS VDS=10V 4V 2.5 2.5 Drain Current, ID -- A 8V Drain Current, ID -- A 2.0 2.0 VGS=3V 10V 1.5 1.5 1.0 1.0 Ta= 75° C --25 °C 0 0.5 1.0 1.5 2.0 2.5 0.5 0.5 0 0 0.2 0.4 0.6 0.8 1.0 IT02709 0 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 400 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 300 25°C IT02710 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 250 ID=0.5A 1.0A 200 0. I D= VG 5A, 4V S= 150 .0A I D=1 100 =10V , VGS 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02711 Ambient Temperature, Ta -- °C IT02712 No.6864-2/4 MCH3410 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 3 2 = Ta 5 --2 C 25° °C 75 °C Forward Current, IF -- A 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 5 7 10 IT02713 1000 7 5 3 2 0 0.2 0.4 Ta=7 5°C 25°C --25° C 0.6 0.8 1.0 1.2 1.4 IT02714 SW Time -- ID VDD=15V VGS=10V Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time -- ns 5 2 td(off) Ciss, Coss, Crss -- pF 3 Ciss 100 7 5 3 2 tf 10 7 5 3 2 td(on) tr Coss Crss 1.0 3 5 7 0.1 2 3 5 7 1.0 2 3 5 10 0 5 10 15 20 25 30 IT02716 Drain Current, ID -- A 10 IT02715 10 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2.0A 8 IDP=8A ID=2A 1m 10 s 0µ <10µs s Drain Current, ID -- A 10 DC 6 1.0 7 5 3 2 0.1 7 5 3 2 10 op er ms 0m s ati on 4 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.1 Total Gate Charge, Qg -- nC 1.2 IT02717 PD -- Ta Drain-t.


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