MCH6601

Ordering number:ENN6458 P-Channel Silicon MOSFET MCH6601 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. Package Dimensions unit:mm 2173 [MCH6601] 0.25 0.3 6 5 4 1.6 2.1 0.15 1 2.0 0.25 2 3 0.65 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.15 0.85 Ratings –30 ±10 –0.2 –0.8 0.8 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (900mm2×0.8mm) 1unit Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–50mA ID=–50mA, VGS=–4V ID=–30mA, VGS=–2.5V ID=–1mA, VGS=–1.5V –0.4 80 110 8 11 27 10.4 15.4 54 Conditions Ratings min –30 –10 ±10 –1.4 typ max Unit V µA µA V mS Ω Ω Ω Marking : FA Continued on next page. Any and all SANYO products described or containe...