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MCH6604 Dataheets PDF



Part Number MCH6604
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6604 DatasheetMCH6604 Datasheet (PDF)

Ordering number:ENN6459 N-Channel Silicon MOSFET MCH6604 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. Package Dimensions unit:mm 2173 [MCH6604] 0.25 0.3 6 5 4 1.6 2.1 0.15 1 2.0 0.25 2 3 0.65 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr.

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Ordering number:ENN6459 N-Channel Silicon MOSFET MCH6604 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. Package Dimensions unit:mm 2173 [MCH6604] 0.25 0.3 6 5 4 1.6 2.1 0.15 1 2.0 0.25 2 3 0.65 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.15 0.85 Ratings 50 ±10 0.25 1 0.8 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (900mm2×0.8mm) 1unit Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 130 180 6 7.1 10 7.8 9.9 20 Conditions Ratings min 50 10 ±10 1.3 typ max Unit V µA µA V mS Ω Ω Ω Marking : FD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60100TS (KOTO) TA-2459 No.6459-1/4 MCH6604 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0 Conditions Ratings min typ 6.6 4.7 1.7 18 42.


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