MCH6610

Ordering number : ENN7042 MCH6610 N-Channel Silicon MOSFET MCH6610 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. 0.25 2.1 1.6 [MCH6610] 0.3 0.15 4 5 6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm 2!0.8mm)1unit Conditions 1 2 3 Ratings 50 ± 10 0.45 1.8 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V Ratings min 50 10 ± 10 0.4 340 490 1.9 2.2 3.2 2.4 3 6.4 1.3 typ max Unit V µA µA V mS Ω Ω Ω Marking : FJ Continued on next page. Any and all ...