MCH6613

Ordering number : ENN6920 MCH6613 N-Channel and P-Channel Silicon MOSFETs MCH6613 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2173A [MCH6613] 0.25 The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive. 0.3 0.15 4 2.1 1.6 5 6 0.25 3 2 0.65 2.0 0.07 1 (Bottom view) 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ± 10 0.35 1.4 P-channel -30 ±10 --0.2 --0.8 0.8 150 Unit V V A A W °C °C --55 to +150 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 150 220 2.9 3.7 6.4 3.7 5.2 12.8 30 10 ± 10 1.3 V µA µA V...