MCH6615

Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2173 [MCH6615] 0.25 The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Low ON-resistance. 2.5V drive. 0.3 0.15 6 5 4 1.6 2.1 1 0.25 2 3 0.65 2.0 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ± 10 0.65 2.6 0.8 150 --55 to +150 0.15 0.85 P-channel -30 ±10 --0.4 --1.6 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=150mA ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 400 560 0.9 1.2 2.6 1.2 1.7 5.2 30 10 ± 10 1.3 V µA µA V mS Ω Ω Ω Symbol...