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MCM69F536C

Motorola

32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69F536C/D 32K x 36 Bit Flow–Through BurstRAM Synchron...


Motorola

MCM69F536C

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Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69F536C/D 32K x 36 Bit Flow–Through BurstRAM Synchronous Fast Static RAM The MCM69F536C is a 1M–bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the 68K Family, PowerPC™, 486, i960™, and Pentium™ microprocessors. It is organized as 32K words of 36 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (SA), data inputs (DQx), and all control signals except output enable (G) and Linear Burst Order (LBO) are clock (K) controlled through positive–edge–triggered noninverting registers. Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM69F536C (burst sequence operates in linear or interleaved mode dependent upon the state of LBO) and controlled by the burst address advance (ADV) input pin. Write cycles are internally self–timed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous glob...




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