MCR08BT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR08BT1/D SOTĆ223 SCR Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Sensitive Gate Trigger Current Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MCR08BT1 Series* *Motorola preferred devices SCR 0.8 AMPERE RMS 200 thru 600 Volts CASE 318E-04 (SOT-223) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (1/2 Sine Wave, RGK = 1000 Ω, TJ = 25 to 110°C) MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, Forward, TA = 25°C Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM, VRRM 200 400 600 0.8 10 0.4 0.1 0.01 –40 to +110 –40 to +150 260 Amps Amps A2s Watts Watts °C °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to A...