Triode Thyristors. MCR100-8 Datasheet

MCR100-8 Thyristors. Datasheet pdf. Equivalent

Part MCR100-8
Description Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR100/D Silicon Controlled Rectifie.
Manufacture Motorola
Datasheet
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MCR100-8
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200 µA Maximum
Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
Low Holding Current — 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
Order this document
by MCR100/D
MCR100
Series*
*Motorola preferred devices
SCRs
0.8 AMPERE RMS
100 thru 600 VOLTS
G
AK
K
G
A
CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, RGK = 1 k
MCR100-3
MCR100-4
MCR100-6
MCR100-8
Symbol
VDRM
and
VRRM
Value
100
200
400
600
Unit
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
IT(RMS)
0.8
Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
10
0.415
Amps
A2s
Peak Gate Power — Forward, TA = 25°C
Average Gate Power — Forward, TA = 25°C
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS)
PGM
PGF(AV)
IGFM
0.1
0.01
1
Watts
Watt
Amp
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
tLead Solder Temperature
( 1/16I from case, 10 s max)
VGRM
TJ
Tstg
5
–40 to +125
–40 to +150
+230
Volts
°C
°C
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1



MCR100-8
MCR100 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
RθJC
Thermal Resistance, Junction to Ambient
RθJA
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kunless otherwise noted.)
Characteristic
Symbol
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM)
Forward “On” Voltage(1)
(ITM = 1 A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(2)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
TC = 25°C
TC = 125°C
TC = 25°C
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
(Anode Voltage = Rated VDRM, RL = 100 Ohms)
TC = 25°C
TC = –40°C
TC = 125°C
Holding Current
TC = 25°C
(Anode Voltage = 7 Vdc, initiating current = 20 mA)
TC = –40°C
p1. Forward current applied for 1 ms maximum duration, duty cycle 1%.
2. RGK current is not included in measurement.
IDRM, IRRM
VTM
IGT
VGT
IH
Max Unit
75 °C/W
200 °C/W
Min Max Unit
— 10 µA
— 100 µA
— 1.7 Volts
— 200 µA
— 0.8 Volts
— 1.2
0.1 —
— 5 mA
— 10
FIGURE 1 – MCR100-7, MCR100-8 CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
120 α
α = CONDUCTION ANGLE
110
CASE MEASUREMENT
100
POINT — CENTER OF
FLAT PORTION
90
dc
80
70
α = 30°
60° 90° 120°
180°
60
50
40
0 0.1 0.2 0.3 0.4 0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
FIGURE 2 – MCR100-7, MCR100-8 CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
120
α = CONDUCTION ANGLE
α
100
TYPICAL PRINTED
CIRCUIT BOARD
80 MOUNTING
60 dc
40
α = 30°
60° 90° 120°
180°
20
0 0.1 0.2 0.3 0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
2 Motorola Thyristor Device Data





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