MCR102

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR102/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 85°C Low Holding Current — 5 mA Maximum Passivated Surface for Reliability and Uniformity MCR102 MCR103 SCRs 0.8 AMPERES RMS 30 and 60 VOLTS G A K KG A CASE 29-04 (TO-226AA) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(2) (TC = + 85°C, RGK = 1 kΩ) MCR102 MCR103 Forward Current RMS (See Figures 1 & 2) (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Average Gate Power — Forward, TA = 25°C Peak Gate Current — Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Lead Solder Temperature ( 1/16I from case, 10 s max) Symbol VDRM VRRM IT(RMS) ITSM I2t PGM PGF(AV) IGFM VGRM TJ Tstg — Value 30 60 0.8 10 0.415 0.1 0.01...