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MCR106 Dataheets PDF



Part Number MCR106
Manufacturers ON
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Description Sensitive Gate Silicon Controlled Rectifiers
Datasheet MCR106 DatasheetMCR106 Datasheet (PDF)

MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. • Glass-Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction f.

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MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. • Glass-Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., MCR106–6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MCR106–6 MCR106–8 On-State RMS Current (TC = 93°C) (180° Conduction Angles) Average On–State Current (180° Conduction Angles; TC = 93°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 93°C, Pulse Width Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM 4.0 2.55 25 Amps Amps Amps 3 Value Unit Volts A http://onsemi.com SCRs 4 AMPERES RMS 400 thru 600 VOLTS G K 2 1 I2t PGM PG(AV) IGM VRGM TJ Tstg — 2.6 0.5 0.1 0.2 6.0 –40 to +110 –40 to +150 6.0 A2s Watt Watt 1 Amp Volts °C °C in. lb. 2 3 v 1.0 µs) v 1.0 µs) v 1.0 µs) TO–225AA (formerly TO–126) CASE 077 STYLE 2 Forward Average Gate Power (TC = 93°C, t = 8.3 ms) Forward Peak Gate Current (TC = 93°C, Pulse Width PIN ASSIGNMENT Cathode Anode Gate Peak Reverse Gate Voltage (TC = 93°C, Pulse Width ORDERING INFORMATION Device MCR106–6 MCR106–8 Package TO225AA TO225AA Shipping 500/Box 500/Box Operating Junction Temperature Range Storage Temperature Range Mounting Torque(2) (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev. 3 Publication Order Number: MCR106/D MCR106–6, MCR106–8 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds S.


MCR106 MCR106 MCR106-6


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