MCR106-6

MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = −40 to 110°C, Sine Wave 50 to 60 VRRM Hz, RGK = 1 kW) MCR106−6 400 MCR106−8 600 On-State RMS Current, (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 A Average On−State Current, (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Considerations, (t = 8.3 ms) ITSM I2t 25 A 2.6 A2s Forward Peak Gate Power, (TC = 93°C, Pulse Width v 1.0 ms) PGM 0.5 W Forward Average Gate Power, (TC = 93°C, t = 8.3 ms) PG(AV) 0.1 W Forward Peak Gate Current, (TC = 93°C, Pulse Width v 1.0 ms) IGM 0.2 A Peak Reverse Gate Voltage, (TC = 93°C, Pulse Width v 1.0 ms) VRGM 6.0 V Operating Junction Temperature Range Storage Temperature Range Mounting...