MCR106-6, MCR106-8
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devic...
MCR106-6, MCR106-8
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
P
NPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important.
Features
Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) VDRM,
V
(TJ = −40 to 110°C, Sine Wave 50 to 60
VRRM
Hz, RGK = 1 kW) MCR106−6
400
MCR106−8
600
On-State RMS Current, (TC = 93°C) (180° Conduction Angles)
IT(RMS)
4.0
A
Average On−State Current, (180° Conduction Angles; TC = 93°C)
IT(AV)
2.55
A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Considerations, (t = 8.3 ms)
ITSM I2t
25
A
2.6
A2s
Forward Peak Gate Power, (TC = 93°C, Pulse Width v 1.0 ms)
PGM
0.5
W
Forward Average Gate Power, (TC = 93°C, t = 8.3 ms)
PG(AV)
0.1
W
Forward Peak Gate Current, (TC = 93°C, Pulse Width v 1.0 ms)
IGM
0.2
A
Peak Reverse Gate Voltage, (TC = 93°C, Pulse Width v 1.0 ms)
VRGM
6.0
V
Operating Junction Temperature Range Storage Temperature Range Mounting...