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MCR12DSM Dataheets PDF



Part Number MCR12DSM
Manufacturers Motorola
Logo Motorola
Description Silicon Controlled Rectifiers
Datasheet MCR12DSM DatasheetMCR12DSM Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR12DSM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR12DSN Shipp.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR12DSM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR12DSN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MCR12DSNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MCR12DSN–1 A MCR12DSM MCR12DSN Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. SCRs 12 AMPERES RMS 600 thru 800 VOLTS A K K A G CASE 369A–13 STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C, RGK = 1.0 KW) On–State RMS Current (All Conduction Angles; TC = 75°C) Average On–State Current (All Conduction Angles; TC = 75°C) Peak Non–Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 75°C) Average Gate Power (t = 8.3 msec, TC = 75°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 75°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM MCR12DSM MCR12DSN IT(RMS) 12 IT(AV) ITSM 100 I2t PGM 5.0 PG(AV) 0.5 IGM TJ Tstg 2.0 –40 to 110 –40 to 150 Amps °C 41 A2sec Watts 7.6 600 800 Amps Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) Symbol RqJC RqJA RqJA Max 2.2 88 80 Unit °C/W TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 KW; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data © Motorola, Inc. 1997 1 MCR12DSM MCR12DSN ELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 KW unless otherwise noted) Characteristics Peak Reverse Gate Blocking Voltage (IGR = 10 mA) Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM) (1) Peak Reverse Gate Blocking Current (VGR = 10 V) Peak On–State Voltage (2) (ITM = 24 A) Gate Trigger Current (Continuous dc) (3) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) (VD = 12 V, RL = 100 W, TJ = 110°C) Holding Current (VD = 12 V, I(init) = 200 mA, TJ = 25°C) (VD = 12 V, I(init) = 200 mA, TJ = –40°C) Latching Current (VD = 12 V, IG = 2.0 mA, TJ = 25°C) (VD = 12 V, IG = 2.0 mA, TJ = –40°C) Symbol VGRM 10 IDRM IRRM — — IRGM — VTM — IGT 5.0 — VGT 0.45 — 0.2 IH 0.5 — IL 0.5 — 1.0 — 6.0 10 1.0 — 6.0 10 mA 0.65 — — 1.0 1.5 — mA 12 — 200 300 1.4 2.1 — 1.2 — — 10 500 12.5 18 Min Typ Max Unit Volts mA mA Volts TJ = 25°C TJ = 110°C mA Volts DYNAMIC CHARACTERISTICS Characteristics Total Turn–On Time (Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) Critical Rate of Rise of Off–State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C) Symbol tgt — dv/dt 2.0 10 — 2.0 5.0 Min Typ Max Unit ms V/ms (1) Ratings apply for negative gate voltage or RGK = 1.0 KW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. (3) Does not include RGK current. 2 Motorola Thyristor Device Data MCR12DSM MCR12DSN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 105 100 95 90 85 80 75 70 0 dc 16 14 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) 90° 60° 120° 180° a = Conduction Angle a dc a = 30° a = Conduction Angle 1.0 2.0 a 180° a = 30° 3.0 4.0 60° 5.0 90° 6.0 120° 7.0 8.0 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On–State Power Dissipation I T, INSTANTANEOUS ON–STATE CURRENT (.


MCR12DCN MCR12DSM MCR12DSN


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