Silicon Controlled Rectifiers
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR25/D
Silicon Controlled Rectifiers
Reverse Blocking T...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR25/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS High Surge Current Capability — 300 Amperes Industry Standard TO–220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity
*Motorola preferred devices
MCR25 SERIES*
SCRs 25 AMPERES RMS 400 thru 800 VOLTS
A
K A
G
CASE 221A–06 (TO-220AB) Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 125°C) Symbol VDRM VRRM MCR25D MCR25M MCR25N IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 25 300 373 20.0 0.5 2.0 – 40 to +125 – 40 to +150 A A A2sec Watts Watts A °C °C Value Unit Volts
On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature fo...
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