MCR310

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR310/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Center Gate Geometry for Uniform Current Density All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits MCR310 Series SCRs 10 AMPERES RMS 50 thru 800 VOLTS A G C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = –40 to 110°C) (1/2 Sine Wave, RGK = 1 kΩ) MCR310-2 MCR310-3 MCR310-4 MCR310-6 MCR310-8 MCR310-10 On-State RMS Current (TC = 75°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Voltage (t Symbol VDRM or VRRM 50 100 200 400 600 800 IT(RMS) ITSM I2t VGM IGM PGM PG(AV) TJ Tstg – 10 100 40 ±5 1 5 0.75 –40 to +110 –40 to +150 8 Amps Amps A2s Volts Amp Watts Watt °C °C in.-lb. Value Unit Volts K A G CASE 221A-04 (TO-220AB) STYLE 3 p 10 µs) Peak Gate Current (t p 10 µs) Peak Gate Power (t p 10 µs) Average Gate Power Operating Junction Temperature Range Storage Temperature Range Mounting Torq...