SILICON CONTROLLED RECTIFIERS
MCR68-2 Silicon Controlled Rectifiers
Reverse Blocking Thyristors
• Glass-Passivated Junctions for Greater Parameter Sta...
Description
MCR68-2 Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glass-Passivated Junctions for Greater Parameter Stability and
Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 Amps Device Marking: Logo, Device Type, e.g., MCR68–2, Date Code
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Designed for overvoltage protection in crowbar circuits.
SCRs 12 AMPERES RMS 50 VOLTS
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage(1) (TJ = 40 to +125°C, Gate Open) MCR68–2 Symbol VDRM, VRRM 50 ITM IT(RMS) IT(AV) ITSM 300 12 8.0 100 Amps Amps Amps Value Unit Volts
A
K
*
4
Peak Discharge Current(2) On-State RMS Current (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Current (t ≤ 1.0 µs, TC = 85°C) Forward Peak Gate Power (t ≤ 1.0 µs, TC = 85°C) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque
1 Amps
2
3
I2t IGM PGM PG(AV) TJ Tstg —
40 2.0 20 0.5 – 40 to +125 – 40 to +150 8.0
A2s Amps 1 Watts Watt °C 2 3 4
TO–220AB CASE 221A STYLE 3
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMA...
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