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74VHCT05A Dataheets PDF



Part Number 74VHCT05A
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description HEX INVERTER
Datasheet 74VHCT05A Datasheet74VHCT05A Datasheet (PDF)

® 74VHCT05A HEX INVERTER (OPEN DRAIN) s s s s s s s s HIGH SPEED: tPD = 3.2 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 05 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHCT05AM 74VHCT05AT Power down protect.

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® 74VHCT05A HEX INVERTER (OPEN DRAIN) s s s s s s s s HIGH SPEED: tPD = 3.2 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 05 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHCT05AM 74VHCT05AT Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. DESCRIPTION The 74VHCT05A is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. PIN CONNECTION AND IEC LOGIC SYMBOLS August 1999 1/7 74VHCT05A INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCT ION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L H Z: High Impedance Y Z L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 25 ± 50 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 1) (V CC = 5.0 ± 0.5V) Parameter Valu e 4.5 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 20 Unit V V V o C ns/V 1) VIN from 0.8V to 2 V 2/7 74VHCT05A DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOL IOZ High Level Input Voltage Low Level Input Voltage Low Level Output Voltage High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current 4.5 to 5.5 4.5 to 5.5 4.5 4.5 5.5 0 to 5.5 5.5 5.5 I O=50 µ A IO=8 mA VI = VIH or VIL VO = 0V to 5.5V VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND 0.0 Min. 2 0.8 0.1 0.36 ±0.25 Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 2 0.8 0.1 0.44 ±2.5 Max. V V Un it V µA II ICC ∆ICC ±0.1 2 1.35 ±1.0 20 1.5 µA µA mA AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter Test Co ndition V CC (*) CL (pF ) (V) 5.0 5.0 5.0 15 50 50 Value T A = 25 o C Min. Typ . Max. 3.2 4.2 4.2 7.5 5.5 9.8 Un it -40 to 85 o C Min . Max. 1.0 4.8 1.0 1.0 6.4 11.3 tPZL tPLZ Propagation Delay Time Propagation Delay Time ns ns (*) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Min. C IN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) Typ . 4 5 6 Value T A = 25 o C Max. 10 -40 to 85 o C Min . Max. 10 pF pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/6 (per Gate) 3/7 74VHCT05A DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 2.0 0.8 Min. Typ . 0.4 -0.4 V Value T A = 25 o C Max. 0.8 -40 to 85 o C Min . Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0, (n -1) outputs switching and one output atGND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74VHCT05A SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 5/7 .


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