Document
Zener Diodes Composite Elements
MA111
MAZC062D
Silicon planer type
Constant voltage, constant current, waveform cripper and surge absorption circuit
2.9 –0.05
2.8 –0.3 0.65±0.15
+0.2
Unit : mm
0.65±0.15
+0.25 1.5 –0.05
0.95
0.95
q Mini q Low q Two
type package (3-pin) joint capacity zener diode (VZ = 6.2V) anode-common element wiring
1.9±0.2
+0.2
s Features
1
3
0.4 –0.05
+0.1
2
1.45
+0.2 1.1 –0.1
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Instanious forward current Total power dissipation Junction temperature Storage temperature
* With a printed-circuit board
Symbol IFRM Ptot* Tj Tstg
Rating 200 200 150 – 55 to + 150
Unit mA mW ˚C ˚C
1
1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Mini Type Package (3-pin)
s Internal Connection
0 to 0.1
0.1 to 0.3 0.4±0.2
0.8
3 2
s Electrical Characteristics (Ta= 25˚C)*
Parameter Forward voltage Zener voltage Operating resistance Reverse current Terminal capacitance Symbol VF VZ RZ IR Ct *2 RZK
1 Condition min 5.9 typ 0.9 max 1.0 6.5 100 30 3 8 Unit V V Ω Ω µA pF
IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 5.5V VR= 0V, f=1MHz
Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is ±15kV Test method : IEC-801(C=150pF, R=330Ω, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application
s Marking
6.2C
0.16 –0.06
+0.1
.