M29W641DH

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90, 100 and 120ns PROGRAMMING TIME – 10 µs typical – Double Word Program option s s 128 UNIFORM, 32-KWord MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend TSOP48 (N) 12 x 20mm s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming WRITE PROTECT OPTIONS FBGA s – M29W641DH: WP Pin for Write Protection of Highest Address Block – M29W641DL: WP Pin for Write Protection of Lowest Address Block – M29W641DU: No Write Protection s TEMPORARY BLOCK UNPROTECTION MODE s s TFBGA63 (ZA) 7 x 11mm COMMON FLASH INTERFACE EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information s LOW POWER CONSUMPTION – Standby and Automatic Standby ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M29W641D: 22C7h s April 2003 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/42 M29W641DH, M29W641DL, M29W641DU TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...