M29W800AB

M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output 1 44 s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks TSOP48 (N) 12 x 20mm SO44 (M) FBGA s s BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LFBGA48 (ZA) 8 x 6 solder balls s Figure 1. Logic Diagram s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W800AT: D7h – Bottom Device Code, M29W800AB: 5Bh A0-A18 W E G RP VCC s 19 15 DQ0-DQ14 DQ15A–1 M29W800AT M29W800AB BYTE RB s s VSS AI02599 March 2000 1/33 M29W800AT, M29W800AB Figure 2. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 Figure 3. SO Connections 12 13 M29W800T M29W800B 37 36 RB A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS...