SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF327/D
The RF Line
NPN Silicon RF Power Transistor
. . . design...
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF327/D
The RF Line
NPN Silicon RF Power
Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz Built–In Matching Network for Broadband Operation Using Double Match Technique 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications Characterized for 100 to 500 MHz MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
MRF327
80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 316–01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) Collector–Base Breakdown Voltage (IC = 80 mAdc, I...
