M34D64

M34D64 M34D32 64/32 Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Quarter of Memory PRELIMINARY DATA s s Compatible with I2C Extended Addressing Two Wire I2C Serial Interface Supports 400 kHz Protocol Single Supply Voltage: – 4.5V to 5.5V for M34Dxx – 2.5V to 5.5V for M34Dxx-W – 1.8V to 3.6V for M34Dxx-R s 8 1 PSDIP8 (BN) 0.25 mm frame s Hardware Write Control of the top quarter of memory BYTE and PAGE WRITE (up to 32 Bytes) RANDOM and SEQUENTIAL READ Modes Self-Timed Programming Cycle Automatic Address Incrementing Enhanced ESD/Latch-Up Behavior More than 1 Million Erase/Write Cycles More than 40 Year Data Retention s s s s s s s 8 1 SO8 (MN) 150 mil width DESCRIPTION These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronics’ High Endurance, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The memories are organized as 8192x8 bits (M34D64) and 4096x8 bits (M34D32), and operate down to Figure 1. Logic Diagram VCC Table 1. Signal Names E0, E1, E2 SDA Chip Enable Inputs Serial Data/Address Input/ Output Serial Clock Write Control Supply Voltage Ground 3 E0-E2 SCL WC M34D64 M34D32 SDA SCL WC VCC VSS VSS AI02850 May 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 M34D64, M34D32 Figure 2A. DIP Connections 2.5 V (for the ...