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IRG4BC20U Datasheet, Equivalent, bipolar transistor.Insulated gate bipolar transistor Insulated gate bipolar transistor |
| Part | IRG4BC20U |
|---|---|
| Description | Insulated gate bipolar transistor |
| Feature | PD - 91448D
IRG4BC20U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-s. |
| Manufacture | IRF |
| Datasheet |
| Part | IRG4BC20U |
|---|---|
| Description | Insulated gate bipolar transistor |
| Feature | PD - 91448D
IRG4BC20U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-s. |
| Manufacture | IRF |
| Datasheet |
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