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bipolar transistor. IRG4BC20U Datasheet

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bipolar transistor. IRG4BC20U Datasheet






IRG4BC20U transistor. Datasheet pdf. Equivalent




IRG4BC20U transistor. Datasheet pdf. Equivalent





Part

IRG4BC20U

Description

Insulated gate bipolar transistor



Feature


PD - 91448D IRG4BC20U INSULATED GATE BI POLAR TRANSISTOR Features • UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode • Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3 • Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) ty.
Manufacture

IRF

Datasheet
Download IRG4BC20U Datasheet


IRF IRG4BC20U

IRG4BC20U; p. = 1.85V @VGE = 15V, IC = 6.5A n-chan nel Benefits • Generation 4 IGBTs off er highest efficiency available • IGB Ts optimized for specified application conditions • Designed to be a "drop-i n" replacement for equivalent industry- standard Generation 3 IR IGBTs TO-220A B Absolute Maximum Ratings Parameter V CES IC @ TC = 25°C IC @ TC = 100°C IC M ILM VGE EARV PD @ TC = 2.


IRF IRG4BC20U

5°C PD @ TC = 100°C TJ TSTG Collector- to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Cla mped Inductive Load Current R Gate-to-E mitter Voltage Reverse Voltage Avalanch e Energy S Maximum Power Dissipation Ma ximum Power Dissipation Operating Junct ion and Storage Temperature Range Solde ring Temperature, fo.


IRF IRG4BC20U

r 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 13 6.5 52 52 ± 20 5. 0 60 24 -55 to + 150 300 (0.063 in. (1. 6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resist ance Parameter RθJC RθCS RθJA Wt Jun ction-to-Case Case-to-Sink, Flat, Greas ed Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0. 50 ––– 2.0 (0.07) Max. 2.1 ––– 8.

Part

IRG4BC20U

Description

Insulated gate bipolar transistor



Feature


PD - 91448D IRG4BC20U INSULATED GATE BI POLAR TRANSISTOR Features • UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode • Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3 • Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) ty.
Manufacture

IRF

Datasheet
Download IRG4BC20U Datasheet




 IRG4BC20U
PD - 91448D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-220AB
Max.
600
13
6.5
52
52
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000




 IRG4BC20U
IRG4BC20U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
0.69
1.85
2.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
2.27 V IC = 13A
See Fig.2, 5
1.87
IC = 6.5A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
1.4 4.3 S VCE = 100V, IC = 6.5A
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
27 41
4.5 6.8
10 16
21
13
86 130
120 180
0.10
0.12
0.22 0.4
20
14
190
140
0.42
7.5
530
39
7.4
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 6.5A
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 10, 11, 13, 14
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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 IRG4BC20U
IRG4BC20U
25
20
15
S q u a re w a ve :
60% of rated
v oltage
10
I
5
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specifie d
Pow er D is sipa tion = 13 W
T ria ngu lar w ave :
I
C lamp voltage:
80% of rated
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100
TJ = 25°C
TJ = 150°C
10
1
0.1
0.1
VGE = 15V
20µs PULSE WIDTH
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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A
100
TJ = 1 5 0°C
10
TJ = 2 5 °C
1
V CC = 10V
0.1 5µs PU LSE W ID TH A
4 6 8 10 12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3



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