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IRLR120A Datasheet, Equivalent, N-CHANNEL MOSFET.

N-CHANNEL MOSFET

N-CHANNEL MOSFET

 

 

 

Part IRLR120A
Description N-CHANNEL MOSFET
Feature $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avala nche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capaci tance ♦ Improved Gate Charge ♦ Exte nded Safe Operating Area ♦ Lower Leak age Current: 10µA (Max.
) @ VDS = 100V ♦ Lower RDS(ON): 0.
176Ω (Typ.
) IRL R/U120A BVDSS = 100 V RDS(on) = 0.
22Ω ID = 8.
4 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute M aximum Ratings Symbol VDSS ID IDM VGS E AS IAR EAR dv/dt PD Characteristic Drai n-to-Source Voltage Continuous Drain Cu rrent (TC=25°C) Continuous Drain Curre nt (TC=100°C) Drain Current-Pulsed Gat e-to-Source Voltage Single Pulsed A .
Manufacture Fairchild
Datasheet
Download IRLR120A Datasheet
Part IRLR120A
Description N-CHANNEL MOSFET
Feature $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avala nche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capaci tance ♦ Improved Gate Charge ♦ Exte nded Safe Operating Area ♦ Lower Leak age Current: 10µA (Max.
) @ VDS = 100V ♦ Lower RDS(ON): 0.
176Ω (Typ.
) IRL R/U120A BVDSS = 100 V RDS(on) = 0.
22Ω ID = 8.
4 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute M aximum Ratings Symbol VDSS ID IDM VGS E AS IAR EAR dv/dt PD Characteristic Drai n-to-Source Voltage Continuous Drain Cu rrent (TC=25°C) Continuous Drain Curre nt (TC=100°C) Drain Current-Pulsed Gat e-to-Source Voltage Single Pulsed A .
Manufacture Fairchild
Datasheet
Download IRLR120A Datasheet

IRLR120A

IRLR120A
IRLR120A

IRLR120A

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