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IRLR120A Datasheet, Equivalent, N-CHANNEL MOSFET.N-CHANNEL MOSFET N-CHANNEL MOSFET |
| Part | IRLR120A |
|---|---|
| Description | N-CHANNEL MOSFET |
| Feature | $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avala nche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capaci tance ♦ Improved Gate Charge ♦ Exte nded Safe Operating Area ♦ Lower Leak age Current: 10µA (Max. ) @ VDS = 100V ♦ Lower RDS(ON): 0. 176Ω (Typ. ) IRL R/U120A BVDSS = 100 V RDS(on) = 0. 22Ω ID = 8. 4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute M aximum Ratings Symbol VDSS ID IDM VGS E AS IAR EAR dv/dt PD Characteristic Drai n-to-Source Voltage Continuous Drain Cu rrent (TC=25°C) Continuous Drain Curre nt (TC=100°C) Drain Current-Pulsed Gat e-to-Source Voltage Single Pulsed A . |
| Manufacture | Fairchild |
| Datasheet |
| Part | IRLR120A |
|---|---|
| Description | N-CHANNEL MOSFET |
| Feature | $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avala nche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capaci tance ♦ Improved Gate Charge ♦ Exte nded Safe Operating Area ♦ Lower Leak age Current: 10µA (Max. ) @ VDS = 100V ♦ Lower RDS(ON): 0. 176Ω (Typ. ) IRL R/U120A BVDSS = 100 V RDS(on) = 0. 22Ω ID = 8. 4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute M aximum Ratings Symbol VDSS ID IDM VGS E AS IAR EAR dv/dt PD Characteristic Drai n-to-Source Voltage Continuous Drain Cu rrent (TC=25°C) Continuous Drain Curre nt (TC=100°C) Drain Current-Pulsed Gat e-to-Source Voltage Single Pulsed A . |
| Manufacture | Fairchild |
| Datasheet |
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