4 Mbit 512Kb x8 Low Power SRAM with Output Enable
M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA...
Description
M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max)
s s s s s s s
OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS for OPTIMUM SPEED/POWER AUTOMATIC POWER-DOWN WHEN DESELECTED INTENDED FOR USE WITH ST ZEROPOWER® AND TIMEKEEPER ® CONTROLLERS
32
1
TSOP II 32 (NC) 10 x 20mm
s
Figure 1. Logic Diagram
DESCRIPTION The M68Z512 is a 4 Mbit (4,194,304 bit) CMOS SRAM, organized as 524,288 words by 8 bits. The device features fully static operation requiring no external clocks or timing strobes, with equal address access and cycle times. It requires a single 5V ±10% supply, and all inputs and outputs are TTL compatible. This device has an automatic power-down feature, reducing the power consumption by over 99% when deselected. The M68Z512 is available in a 32 lead TSOP II (10 x 20mm) package. Table 1. Signal Names
A0-A18 DQ0-DQ7 E G W VCC VSS Address Inputs
VCC
19 A0-A18
8 DQ0-DQ7
W E G
M68Z512
Data Input/Output Chip Enable Output Enable Write Enable Supply Voltage Ground
VSS
AI03030
March 2000
1/12
M68Z512
Table 2. Absolute Maximum Ratings (1)
Symbol TA TSTG VIO (2) VCC IO (3) PD Parameter Ambient Operating Temperature Storage Temperature Input or Output Voltage Supply Voltage Output Current Power Dissipation Value 0 to 70 –65 to 150 –0.3 to VCC + 0.3 –0.3 to 7.0 20 1 Unit °C °C V V mA W
Note: 1...
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