M6MGT166S4BWG

MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T166S4BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight . FEATURES Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.) Supply voltage Vcc=2.7 ~ 3.6V Ambient temperature W version Ta=-20 ~ 85°C Package : 72-pin S-CSP , 0.8mm ball pitch APPLICATION Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX H NC NC DU A5 A4 A0 F-A18 S-LB# F-WP# GND F-WE# FRY/BY# G F E D C B A NC 1 NC 2 A16 A8 A10 A9 DQ15 DU 3 A11 4 A15 5 A14 6 A13 7 A12 8 F-GND F-A17 S-UB# DU F-A19 F-RP# F-VCC S-VCC F-GND GND A0-A16 A7 A6 A3 A2 A1 SCE1# S-OE# DU DU DQ12 SCE2 S-VCC DU S-A17 DU DQ11 11.0 mm F-CE# DQ9 DU DQ8 DQ10 DQ13 :Vcc for Flash :Vcc for SRAM :GND for Flash :Flash/SRAM common GND :Flash/SRAM common Address F-A17-F-A19 :Address for F...