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M74HC04

ST Microelectronics

HEX INVERTER

M74HC04 Hex inverter Datasheet - production data DIP14 SO14 TSSOP14 Features  High speed: tPD = 8 ns (typ.) at VC...


ST Microelectronics

M74HC04

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Description
M74HC04 Hex inverter Datasheet - production data DIP14 SO14 TSSOP14 Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wide operating voltage range: VCC (OPR) = 2 V to 6 V  Pin and function compatible with 74 series 04  ESD performance – CDM: 1 kV – HBM: 2 kV – MM: 200 V Description The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology. The internal circuit is composed of 3 stages including a buffer output which enables high noise immunity and stable output. All inputs are equipped with protection circuits to guard against static discharge and transient excess voltage. Order code Table 1. Device summary Temperature range Package Packaging Marking M74HC04B1R M74HC04YRM13TR(1) M74HC04RM13TR M74HC04TTR M74HC04YTTR(1) -55 °C to +125 °C -40 °C to +125 °C -55 °C to +125 °C -55 °C to +125 °C -40 °C to +125 °C DIP14 Tube M74HC04B1 SO14 (automotive grade) Tape and reel 74HC04Y SO14 Tape and reel 74HC04 TSSOP14 Tape and reel HC04 TSSOP14 (automotive grade) Tape and reel HC04Y 1. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 and Q002 or equivalent. September 2013 This is information on a product in full production. Do...




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