Document
M54/74HC125 M54/74HC126
QUAD BUS BUFFERS (3-STATE)
. . . . . . . .
HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS BALANCED PROPAGATION DELAYS tPLH = tPHL SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH = 6 mA (MIN.) HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS125/126
B1R (Plastic Package)
F1R (Ceramic Package)
M1R (Micro Package)
C1R (Chip Carrier)
ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R
DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. These devices require the same 3-STATE control input G to be taken high to make the output go into the high impedance state. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT
HC126
PIN CONNECTIONS (top view)
HC125
NC = No Internal Connection
September 1993
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M54/M74HC125/126
CHIP CARRIER
HC125 HC126
TRUTH TABLE (HC125)
A X L H G H L L Y Z L H
TRUTH TABLE (HC126)
A X L H G L H H Y Z L H
PIN DESCRIPTION (HC125)
PIN No 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 SYMBOL G1 to G4 A1 to A4 Y1 to Y4 GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
PIN DESCRIPTION (HC126)
PIN No 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 SYMBOL G1 to G4 A1 to A4 Y1 to Y4 GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
IEC LOGIC SYMBOLS
HC125 HC126
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M54/M74HC125/126
CIRCUIT DIAGRAM
HC125 HC126
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW
o o
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns
o o
VCC = 2 V VCC = 4.5 V VCC = 6 V
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M54/M74HC125/126
DC SPECIFICATIONS
Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 V OH High Level Output Voltage 2.0 4.5 6.0 4.5 VOL Low Level Output Voltage 6.0 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current 3 State Output Off-state Current Quiescent Supply Current 6.0 6.0 VI = IO=-20 µA VIH or V IL IO=-6.0 mA IO=-7.8 mA VI = IO= 20 µA VIH or V IL IO= 6.0 mA IO= 7.8 mA VI = VCC or GND 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 4 TA = 25 oC 54HC and 74HC Min. Typ. Max. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5 40 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 ±10 80 µA µA µA V V 1.5 3.15 4.2 0.5 1.35 1.8 V V Unit
VIH
High Level Input Voltage Low Level Input Voltage
V IL
VI = VIH or VIL VO = VCC or GND 6.0 VI = VCC or GND
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M54/M74HC125/126
AC ELECTRICAL CHARACTERISTICS (Input t r = t f = 6 ns)
Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 CL (pF) TA = 25 oC 54HC and 74HC Min. Typ. Max. 20 60 6 12 5 10 36 75 9 15 8 13 52 105 13 21 11 18 36 75 9 15 8 13 52 105 13 21 11 18 48 80 12 16 10 14 5 10 35 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 75 90 15 18 13 15 95 110 19 22 16 19 130 160 26 32 22 27 95 110 19 22 16 19 130 160 26 32 22 27 100 120 20 24 17 20 10 10
Unit
tTLH tTHL tPLH tPHL
Output Transition Time Propagation Delay Time
50
ns
50
ns
150
ns
tPZL tPZH
3 State Output Enable Time
50
RL = 1 KΩ
ns
150
RL = 1 KΩ
ns
tPLZ tPHZ CIN CPD (*)
3 State Output Disable Time Input Capacitance Power Dissipation Capacitance
50
RL = 1 KΩ
ns pF pF
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC
SWITCHING CHARACTERISTICS TEST WAVEFORM
HC125
A G G
Y Y Y
HC126
A
Y
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M54/M74HC125/126
TEST CIRCUIT ICC (Opr.)
HC125
THE OTHER.