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M74HCT14 Dataheets PDF



Part Number M74HCT14
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HEX SCHMITT INVERTER
Datasheet M74HCT14 DatasheetM74HCT14 Datasheet (PDF)

M74HCT14 HEX SCHMITT INVERTER s s s s s s HIGH SPEED: tPD = 19ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY : VH = 0.7V (TYP) at Vcc = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 14 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HCT14B1R M74HCT14M1R T&R M74HCT14RM13TR M74HCT14TTR DESCRIPTION The M74HCT14 is an high speed CMOS HEX S.

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M74HCT14 HEX SCHMITT INVERTER s s s s s s HIGH SPEED: tPD = 19ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY : VH = 0.7V (TYP) at Vcc = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 14 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HCT14B1R M74HCT14M1R T&R M74HCT14RM13TR M74HCT14TTR DESCRIPTION The M74HCT14 is an high speed CMOS HEX SCHMITT INVERTER fabricated with silicon gate C2MOS technology. Pin configuration and function are the same as those of the M74HCT04 but all inputs have 0.7 V hysteresis level. This together with its schmitt trigger function allows it to be used on line receiver with slow rise/fall input signals. The M74HCT14 is designed to directly interface HSC2MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HCT14 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L H Y H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top Supply Voltage Input Voltage Output Voltage Operating Temperature Parameter Value 4.5 to 5.5 0 to VCC 0 to VCC -55 to 125 Unit V V V °C 2/8 M74HCT14 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 5.5 IO=-20 µA IO=-4.0 mA IO=20 µA IO=4.0 mA VI = VCC or GND VI = VCC or GND TA = 25°C Min. 1.2 1.4 0.5 0.6 0.4 0.4 4.4 4.18 Typ. 1.55 1.75 0.85 1.1 0.7 0.7 4.5 4.31 0.0 0.17 0.1 0.26 ± 0.1 1 Max. 1.9 2.1 1.2 1.4 1.4 1.5 Value -40 to 85°C Min. 1.2 1.4 0.5 0.6 0.4 0.4 4.4 4.13 0.1 0.33 ±1 10 Max. 1.9 2.1 1.2 1.4 1.4 1.5 -55 to 125°C Min. 1.2 1.4 0.5 0.6 0.4 0.4 4.4 4.10 0.1 0.40 ±1 20 Max. 1.9 2.1 1.2 1.4 1.4 1.5 V V V V V µA µA Unit VP VN VH VOH VOL II ICC High Level Threshold Voltage Low Level Threshold Voltage Hysteresis Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 4.5 4.5 TA = 25°C Min. Typ. 8.


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