MJ11022

www.DataSheet4U.com MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi.com High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) Collector−Emitter Sustaining Voltage Low Collector−Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min) − MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 250 ms Pb−Free Packages are Available* 15 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 250 VOLTS, 175 WATTS TO−204 (TO−3) CASE 1−07 STYLE 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg Value 250 250 50 15 30 0.5 175 1.16 – 65 to +175 − 65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/°C °C MJ1102x = Device Code x = 1 or 2 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin MJ1102xG AYYWW MEX MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 0.86 Unit °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings ap...