MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP)
High-Current Complementary Silicon Power Transistors
High−Curren...
MJ11028, MJ11030, MJ11032 (
NPN) MJ11029, MJ11033 (
PNP)
High-Current Complementary Silicon Power
Transistors
High−Current Complementary Silicon Power
Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
Curves to 100 A (Pulsed) Diode Protection to Rated IC Monolithic Construction with Built−In Base−Emitter Shunt Resistor Junction Temperature to + 200_C Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ11028/29 MJ11030
MJ11032/33
VCEO
60
Vdc
90
120
Collector−Base Voltage
MJ11028/29 MJ11030
MJ11032/33
VCBO
60
Vdc
90
120
Emitter−Base Voltage
Collector Current − Continuous − Peak (Note 1)
VEBO IC
5.0
Vdc
50
Adc
100
Base Current − Continuous
Total Power Dissipation @ TC = 25°C Derate Above 25°C @ TC = 100_C
Operating and Storage Junction Temperature Range
IB PD
TJ, Tstg
2.0
Adc
300
W
1.71
W/°C
− 55 to +200 °C
THERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Soldering Purposes for v 10 seconds
Symbol
Max
Unit
TL
275
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
RqJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal ...