MJ11032

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed) Diode Protection to Rated IC Monolithic Construction with Built−In Base−Emitter Shunt Resistor Junction Temperature to + 200_C Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ11028/29 MJ11030 MJ11032/33 VCEO 60 Vdc 90 120 Collector−Base Voltage MJ11028/29 MJ11030 MJ11032/33 VCBO 60 Vdc 90 120 Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) VEBO IC 5.0 Vdc 50 Adc 100 Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C @ TC = 100_C Operating and Storage Junction Temperature Range IB PD TJ, Tstg 2.0 Adc 300 W 1.71 W/°C −  55 to +200 °C THERMAL CHARACTERISTICS Characteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Soldering Purposes for v 10 seconds Symbol Max Unit TL 275 _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case RqJC 0.58 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal ...