MJ15012

www.DataSheet4U.com MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters. http://onsemi.com High Safe Operating Area (100% Tested) 1.2 A @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available* 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEB IC ICM IB IBM IE IEM PD TJ, Tstg Value 250 250 5 10 15 2 5 12 20 200 1.14 – 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/_C _C TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ1501xG AYYWW MEX THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes Symbol RθJC TL Max 0.875 265 Unit _C/W _C MJ1501x = D...